STY16NA90 n - channel 900v - 0.5 w - 16a - max247 extremely low gate charge power mosfet preliminary data n typical r ds(on) = 0.5 w n efficient and reliable mounting through clip n 30v gate to source voltage rating n repetitive avalanche tested n low intrinsic capacitance n 100% avalanche tested n gate charge minimized n reduced threshold voltage spread description the max247 tm package is a new high volume power package exibiting the same footprint as the industry standard to-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as to-264. the increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies (ups) ? internal schematic diagram type v dss r ds(on) i d STY16NA90 900 v < 0.54 w 16 a june 1998 max247 tm absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 900 v v dgr drain- gate voltage (r gs = 20 k w ) 900 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c16a i d drain current (continuous) at t c = 100 o c10a i dm ( ) drain current (pulsed) 64 a p tot total dissipation at t c = 25 o c 300 w derating factor 2.4 w/ o c t stg storage temperature -55 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area 1/5
thermal data r thj-case r thj-amb r thc-sink thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-heatsink typ with conductive grease 0.42 40 0.05 o c/w o c/w avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 16 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 3000 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 900 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 50 500 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10 v i d = 8 a 0.5 0.54 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 16 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 8 a 15 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 6400 600 150 8300 750 200 pf pf pf STY16NA90 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 450 v i d = 8 a r g = 4.7 w v gs = 10 v 30 30 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 720 v i d = 16 a v gs = 10 v 245 25 110 320 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 720 v i d = 16 a r g = 4.7 w v gs = 10 v 80 25 115 105 35 150 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 16 64 a a v sd ( * ) forward on voltage i sd = 16 a v gs = 0 2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 16 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 1100 25.3 46 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STY16NA90 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.70 5.30 a1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 d 19.70 20.30 e 5.35 5.55 e 15.30 15.90 l 14.20 15.20 l1 3.70 4.30 p025q max247 mechanical data STY16NA90 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rig hts of stmicroelectroni cs. spe cification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previou sly supplied. st microelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of s tmicroelectronics ? 1998 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . STY16NA90 5/5
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